HL6339G Datasheet | Hitachi Semiconductor

Description The HL6339G/42G is 0.63 µm band Al Ga In P laser diode with a multi-quantum well (MQW) structure. Lasing wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Application - Measurement - Laser analysis systems - Laser scanner Features - Optical output power - Visible light output : 5 m W (CW) : 633 nm Typ (nearly equal to He-Ne gas laser) - Low operating current : 55 m A Typ - Low operating voltage : 2.3 V Typ - TM mode oscillation Package Type - HL6339G/42G: G2 Internal Circuit - HL6339G 1 3 Internal Circuit - HL6342G 1 3 HL6339G/42G Absolute Maximum Ratings (TC = 25°C) Item Optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol PO VR(LD) VR(PD) Topr Tstg Value 5 2 30 - 10 to +40 - 40 to +85 Unit m W V V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Threshold current Operating current Operating voltage Slope efficiency Lasing wavelength Beam divergence parallel to the junction Beam divergence parpendicular to the junction Monitor current Symbol PO Ith IOP VOP ηs λp θ// θ⊥ IS Min 5 - - - 0.40 630 6 25 0.04 Typ - 45 55 2.3 0.65 633 8 30 0.08 Max - 60 70 2.7 0.90 635 11 35 0.14 Unit m W m A m A V m W/m A nm deg. deg. m A PO = 5 m W PO = 5 m W 3 (m W) / (I(4m W) - I(1m W)) PO = 5 m W PO = 5 m W PO = 5 m W PO = 5 m W, VR(PD) = 5 V Test Condition Kink free Rev.1, Apr. 2002, page 2 of 8 HL6339G/42G Typical Characteristic...