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HL6339G Datasheet (hl6342g) 633nm Lasing Laser Diode

Manufacturer: Hitachi Semiconductor (now Renesas)

HL6339G Overview

The HL6339G/42G is 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. Lasing wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Application • Measurement • Laser analysis systems • Laser scanner

HL6339G Key Features

  • Optical output power
  • Visible light output : 5 mW (CW) : 633 nm Typ (nearly equal to He-Ne gas laser)
  • Low operating current : 55 mA Typ
  • Low operating voltage : 2.3 V Typ
  • TM mode oscillation
  • HL6339G/42G: G2 Internal Circuit
  • HL6339G
  • HL6342G

HL6339G Distributor