Datasheet Details
| Part number | HL6342G |
|---|---|
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| File Size | 71.31 KB |
| Description | (HL6339G / HL6342G) 633nm Lasing Laser Diode |
| Datasheet |
 HL6342G Datasheet
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General Description
The HL6339G/42G is 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure.
Lasing wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser.
They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Key Features
- Optical output power.
- Visible light output : 5 mW (CW) : 633 nm Typ (nearly equal to He-Ne gas laser).
- Low operating current : 55 mA Typ.
- Low operating voltage : 2.3 V Typ.
- TM mode oscillation Package Type.
- HL6339G/42G: G2 Internal Circuit.
- HL6339G 1 3 Internal Circuit.
- HL6342G 1 3 PD LD PD LD 2 2 HL6339G/42G Absolute Maximum Ratings (TC = 25°C) Item Optical output power LD reverse voltage PD reverse voltage Operat.