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HL6342G

Manufacturer: Hitachi Semiconductor (now Renesas)

HL6342G datasheet by Hitachi Semiconductor (now Renesas).

HL6342G datasheet preview

HL6342G Datasheet Details

Part number HL6342G
Datasheet HL6342G_HitachiSemiconductor.pdf
File Size 71.31 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description (HL6339G / HL6342G) 633nm Lasing Laser Diode
HL6342G page 2 HL6342G page 3

HL6342G Overview

The HL6339G/42G is 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. Lasing wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6342G Key Features

  • Optical output power
  • Visible light output : 5 mW (CW) : 633 nm Typ (nearly equal to He-Ne gas laser)
  • Low operating current : 55 mA Typ
  • Low operating voltage : 2.3 V Typ
  • TM mode oscillation
  • HL6339G/42G: G2 Internal Circuit
  • HL6339G
  • HL6342G
Hitachi Semiconductor (now Renesas) logo - Manufacturer

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HL6342G Distributor

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