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HL6341MG

Manufacturer: Hitachi Semiconductor (now Renesas)

HL6341MG datasheet by Hitachi Semiconductor (now Renesas).

This datasheet includes multiple variants, all published together in a single manufacturer document.

HL6341MG datasheet preview

HL6341MG Datasheet Details

Part number HL6341MG
Datasheet HL6341MG HL6340MG Datasheet (PDF)
File Size 259.86 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description (HL6340MG / HL6341MG) Circular Beam Low Operating Current
HL6341MG page 2 HL6341MG page 3

HL6341MG Overview

The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser levelers, laser scanners and optical equipment for measurement.

HL6341MG Key Features

  • Optical output power : 5 mW CW Single longitudinal mode Visible light power : 635 nm Typ Low operating current : 25 mA T
  • HL6340MG/41MG: MG Internal Circuit
  • HL6340MG
  • HL6341MG
Hitachi Semiconductor (now Renesas) logo - Manufacturer

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