HL6339G - (HL6339G / HL6342G) 633nm Lasing Laser Diode

This page provides the datasheet information for the HL6339G, a member of the HL6342G (HL6339G / HL6342G) 633nm Lasing Laser Diode family.

Product Overview

Hitachi Semiconductor

Part number	HL6339G
Manufacturer	Hitachi Semiconductor
File Size	71.31 KB
Description	(HL6339G / HL6342G) 633nm Lasing Laser Diode
Datasheet	HL6339G Datasheet
Additional preview pages of the HL6339G datasheet.

The HL6339G/42G is 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure.

Lasing wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser.

They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

Optical output power.
Visible light output : 5 mW (CW) : 633 nm Typ (nearly equal to He-Ne gas laser).
Low operating current : 55 mA Typ.
Low operating voltage : 2.3 V Typ.
TM mode oscillation Package Type.
HL6339G/42G: G2 Internal Circuit.
HL6339G 1 3 Internal Circuit.
HL6342G 1 3 PD LD PD LD 2 2 HL6339G/42G Absolute Maximum Ratings (TC = 25°C) Item Optical output power LD reverse voltage PD reverse voltage Operat.

HL6339G - (HL6342G) 633nm Lasing Laser Diode (Hitachi)
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Other Datasheets by Hitachi Semiconductor

Published: Jan 2, 2007 |