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HL6339G

Manufacturer: Hitachi Semiconductor (now Renesas)

HL6339G datasheet by Hitachi Semiconductor (now Renesas).

This datasheet includes multiple variants, all published together in a single manufacturer document.

HL6339G datasheet preview

HL6339G Datasheet Details

Part number HL6339G
Datasheet HL6339G HL6342G Datasheet (PDF)
File Size 71.31 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description (HL6339G / HL6342G) 633nm Lasing Laser Diode
HL6339G page 2 HL6339G page 3

HL6339G Overview

The HL6339G/42G is 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. Lasing wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6339G Key Features

  • Optical output power
  • Visible light output : 5 mW (CW) : 633 nm Typ (nearly equal to He-Ne gas laser)
  • Low operating current : 55 mA Typ
  • Low operating voltage : 2.3 V Typ
  • TM mode oscillation
  • HL6339G/42G: G2 Internal Circuit
  • HL6339G
  • HL6342G

HL6339G from other manufacturers

View HL6339G datasheet index

Brand Logo Part Number Description Other Manufacturers
Hitachi Logo HL6339G (HL6342G) 633nm Lasing Laser Diode Hitachi
Hitachi Semiconductor (now Renesas) logo - Manufacturer

More Datasheets from Hitachi Semiconductor (now Renesas)

View all Hitachi Semiconductor (now Renesas) datasheets

Part Number Description
HL6312G (HL6312G / HL6313G) AlGaInP Laser Diodes
HL6313G (HL6312G / HL6313G) AlGaInP Laser Diodes
HL6314MG AlGaInP Laser Diode
HL6342G (HL6339G / HL6342G) 633nm Lasing Laser Diode
HL6724MG band AlGaInP laser diode

HL6339G Distributor

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