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HL6335G

Manufacturer: Hitachi Semiconductor (now Renesas)

HL6335G datasheet by Hitachi Semiconductor (now Renesas).

HL6335G datasheet preview

HL6335G Datasheet Details

Part number HL6335G
Datasheet HL6335G_Hitachi.pdf
File Size 61.47 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description (HL6336G) Circular Beam Low Operating Current
HL6335G page 2 HL6335G page 3

HL6335G Overview

The HL6335/36G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser levelers, laser scanners and optical equipment for measurement.

HL6335G Key Features

  • Optical output power
  • Visible light output
  • Low aspect ratio
  • TM mode oscillation
  • HL6335/36G: G2 Internal Circuit
  • HL6335G
  • Low operating current : 25 mA Typ
  • Operating temperature : +50°C
  • HL6336G
Hitachi Semiconductor (now Renesas) logo - Manufacturer

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