HSK122
HSK122 is Silicon Epitaxial Planar Diode for High Voltage Switching manufactured by Hitachi Semiconductor.
Features
- High reverse voltage. (VR = 400V)
- LLD package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSK122 Cathode band Orange Package Code LLD
Outline
Cathode band 1 2
Cathode band 1 2
1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM
- IO Tj Tstg Value 410 400 625 1 150 175
- 65 to +175 Unit V V m A A m A °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr Min
- -
- - Typ
- -
- - Max 1.2 1.0 10 10 Unit V µA p F ns Test Condition I F = 100m A VR = 400V VR = 0V, f = 1MHz I F = 30m A, VR = 10V, RL = 2kΩ
Forward current I F (A)
- 1
- 2
- 3
0.8 0.4 0.6 1.0 Forward voltage VF (V)
25°C Ta = 75°C Ta = 2 5°C Ta =
- 2 5°C
Ta = 1
Fig.1 Forward current Vs. Forward voltage
- 6
Ta = 125°C 10 Reverse current I R (A)
- 7
Ta = 75°C
-...
