Download HSM221C Datasheet PDF
Hitachi Semiconductor
HSM221C
HSM221C is Silicon Epitaxial Planar Diode manufactured by Hitachi Semiconductor.
Features - Low capacitance, proof against high voltage. - Fast recovery time. - MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM221C Laser Mark A2 Package Code MPAK Pin Arrangement (Top View) 1 NC 2 Anode 3 Cathode Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Junction temperature Storage temperature Note: Within 1µs forward surge current. Symbol VRM VR I FM I FSM - IO Tj Tstg Value 85 80 300 4 100 125 - 55 to +125 Unit V V m A A m A °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 VF3 Reverse current Capacitance Reverse recovery time IR C t rr Min - - - - - - Typ 0.76 0.88 0.97 - 0.5 - Max 1.0 1.0 1.2 0.1 2.0 3.0 µA p F ns Unit V Test Condition I F = 10m A I F = 50m A I F = 100m A VR = 80V VR = 0V, f = 1MHz I F = 10m A, VR = 6V, RL = 50Ω - 1 Forward current I F (A) - 2 - 3 =7 5°C - 5 - 6 0.6 0.8 0.2 0.4 Forward voltage VF (V) Ta Ta -...