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HSM276ASR - Silicon Schottky Barrier Diode

Key Features

  • High forward current, Low capacitance.
  • HSM276ASR which is interconnected in series configuration is designed for balanced mixer use.
  • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM276ASR Laser Mark S20 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 1 2 Cathode 2 3 Cathode 1 Anode 2 HSM276ASR Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Averag.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HSM276AS Silicon Schottky Barrier Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSM276ASR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-840(Z) Rev 0 Feb. 2000 Features • High forward current, Low capacitance. • HSM276ASR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.