HVC133
HVC133 is Silicon Epitaxial Planar Pin Diode for High Frequency Switching manufactured by Hitachi Semiconductor.
Features
- Low capacitance.(C1=1.0p F max)
- Low forward resistance. (rf=0.7 Ω max)
- Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HVC133 Laser Mark P3 Package Code UFP
Outline
Cathode mark Mark 1
P3
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 30 150 125 -55 to +125 Unit V m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse voltage Reverse current Forward voltage Capacitance Symbol VR IR VF C1 C6 Forward resistance rf Min 30
- -
- -
- Typ
- -
- -
- 0.55 Max
- 100 0.85 1.0 0.9 0.7 Ω Unit V n A V p F Test Condition I R = 1µA VR = 25V I F = 2 m A VR = 1V, f = 1 MHz VR = 6V, f = 1 MHz I F = 2m A, f = 100 MHz
Main Characteristic
-2
-10
10 Forward current I F (A)
-4
(A)
-11
Reverse current I
-6
Ta= 75°C
-12
10 -8
Ta=...
