HVC134
HVC134 is Silicon Epitaxial Planar Pin Diode for High Frequency Switching manufactured by Hitachi Semiconductor.
Features
- Low capacitance.(C=0.4p F max)
- Low forward resistance. (rf=2.0 Ω max)
- Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HVC134 Laser Mark P4 Package Code UFP
Outline
Cathode mark Mark 1
P4
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 -55 to +125 Unit V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability
- 1
Symbol IR VF C rf
- Min
- -
- - 200
Typ
- -
- -
- Max 0.1 1.0 0.4 2.0
- Unit µA V p F Ω V
Test Condition VR = 60V I F = 10 m A VR = 1V, f = 1 MHz I F = 10 m A, f = 100 MHz C =100p F, R = 1.5KΩ, Both forward and reverse direction 5 pulse
Notes 1. Failure criterion ; IR > 0.1 µA at VR = 60V.
Main Characteristic
-2 -7
-4
-8
Forward current I F (A)
Reverse current IR (A)
0 0.2 0.4 0.6 0.8 1.0
10 -9...
