HVC136
HVC136 is Silicon Epitaxial Trench Pin Diode for Antenna Switching manufactured by Hitachi Semiconductor.
Features
- -
- - Adopting the trench structure improves low capacitance.(C = 0.45 p F max) Low forward resistance. (rf = 2.5 Ω max) Low operation current. Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high frequency.
Ordering Information
Type No. HVC136 Laser Mark P6 Package Code UFP
Outline
Cathode mark Mark 1
P6
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 -55 to +125 Unit V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability
- 1
Symbol IR VF C rf
- Min
- -
- - 100
Typ
- -
- -
- Max 0.1 0.9 0.45 2.5
- Unit µA V p F Ω V
Test Condition VR = 60V I F = 2 m A VR = 1V, f = 1 MHz I F = 2m A, f = 100 MHz C = 200p F , Both forward and reverse direction 1 pulse.
Note : 1. Failure criterion ; IR > 100n A at VR =60 V
Main Characteristic
-3
-8
-5
-9
Forward current I F (A)
Reverse current IR...
