HVM187S
HVM187S is Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator manufactured by Hitachi Semiconductor.
Features
- Low forward resistance. (rf = 5.5 max)
- MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HVM187S Laser Mark H3 Package Code MPAK
Pin Arrangement
(Top View)
1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Per one device Symbol VR IF Pd- Tj Tstg Value 60 50 100 125
- 55 to +125 Unit V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol VF IR C rf
- Min
- -
- 3.5 200 Typ
- -
- -
- Max 1.0 100 2.4 5.5
- Unit V n A p F Ω V Test Condition I F = 10m A VR = 60V VR = 0V, f = 1MHz I F = 10m A, f = 100MHz
- C = 200p F, Both forward and reverse direction 1 pulse.
Note: Failure criterion; IR ≥ 100n A at VR = 60V
- 2
- 4
Forward current I F (A)
10- 6
- 8
10- 10
-...
