K1340 Datasheet | Hitachi Semiconductor

Features - Low on-resistance - High speed switching - Low drive current - No secondary breakdown - Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1340 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I - 1 D(pulse) I DR Pch- 2 Tch Tstg Ratings 900 ±30 5 12 5 100 150 - 55 to +150 Unit V V A A A W °C °C 2SK1340 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 900 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current I GSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance - - 2.0 - Forward transfer admittance |yfs| Input...