K1342 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK1342 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% .. 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 900 ±30 8 20 8 100 150 - 55 to +150 Unit V V A A A W °C °C 2SK1342 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 900 ±30 - - 2.0 - 3.5 - - - - - - - - - Typ - - - - - 1.2 5.5 1730 700 310 25 135 185 130 0.9 900 Max - - ±10 250 3.0 1.6 - - - - - - - - - - Unit V V µA µA V Ω S p F p F p F ns ns ns ns V ns I F = 8 A, VGS = 0 I F = 8 A, VGS = 0, di F/dt = 100 A/µs I D = 4 A, VGS = 10 V, RL = 7.5 Ω Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 4 A, VGS = 10 V - 1 I D = 4 A, VDS = 20 V - 1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance .. Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t...