• Part: PF0414A
  • Description: MOS FET Power Amplifier Module for DCS 1800 Handy Phone
  • Manufacturer: Hitachi Semiconductor
  • Size: 32.77 KB
Download PF0414A Datasheet PDF
Hitachi Semiconductor
PF0414A
PF0414A is MOS FET Power Amplifier Module for DCS 1800 Handy Phone manufactured by Hitachi Semiconductor.
Features - - - - 3stage amplifier Small package: 0.2cc High efficiency: 45% Typ High speed switching: 0.9 µsec Pin Arrangement - RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 11 3 6 20 - 30 to +100 - 30 to +100 3 Unit V A V m W °C °C W Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 1710 0.5 - 37 - - - 2.0 Typ - - - 45 - 45 - 45 1.5 2.4 Max 1785 3 100 - - 35 - 35 3 - Unit MHz V µA % d Bc d Bc - W Pin = 2 m W, VDD = 4.8 V, VAPC = 3 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 4.3 V, VAPC = 3 V, RL = Rg = 50 Ω, Tc = 80°C Pin = 2 m W, VDD = 4.8 V, VAPC = 0.5 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 4.8 V, Pout = 1.8 W, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 m W, VDD = 6 V, Ids ≤ 0.9 A (only pulsed), Pout ≤ 1.8 W (at APC controlled), Rg = 50 Ω, t = 20 sec., Tc = 25°C, Output VSWR = 10 : 1 All phases VDD = 11 V, VAPC = 0 V Pin = 2 m W, VDD = 4.8 V, Pout = 1.8 W (at APC controlled), RL = Rg = 50 Ω, Tc = 25°C Test Condition Output power (2) Pout (2) - W Isolation - - - 40 - 30 d Bm Switching time tr, tf - 0.9 µs Stability - No parasitic oscillation -...