PF0414B
PF0414B is MOS FET Power Amplifier Module for DCS 1800 Handy Phone manufactured by Hitachi Semiconductor.
Features
- -
- -
- 3stage amplifier : 0 d Bm input Lead less thin & small package : 2 mm Max & 0.2cc High efficiency : 40% Typ at 32.5 d Bm Wide gain control range : 70 d B Typ Low voltage operation : 3.5 V
Pin Arrangement
- RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 2 4 10
- 30 to +100
- 30 to +100 3 Unit V A V m W °C °C W
Electrical Characteristics (Tc = 25°C)
Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 1710 0.5
- 35
- -
- 32.5 Typ
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- 40
- 45
- 45 1.5 33.0 Max 1785 2.2 100
- - 35
- 35 3
- Unit MHz V µA % d Bc d Bc
- d Bm Pin = 0 d Bm, VDD = 3.5 V, VAPC = 2.2 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 0 d Bm, VDD = 3.0 V, VAPC = 2.2 V, RL = Rg = 50 Ω, Tc = 85°C Pin = 0 d Bm, VDD = 3.5 V, VAPC = 0.5 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 0 d Bm, VDD = 3.5 V, Pout = 32.5 d Bm, RL = Rg = 50 Ω, Tc = 25°C Pin = 0 d Bm, VDD = 3 to 5.1 V, Pout ≤ 32.5 d Bm (at APC controlled), Rg = 50 Ω, t = 20 sec., Tc = 25°C, Output VSWR = 6 : 1 All phases VDD = 8 V, VAPC = 0 V Pin = 0 d Bm, VDD = 3.5 V, Pout = 32.5 d Bm (at APC controlled), RL = Rg = 50 Ω, Tc = 25°C Test Condition
Output power (2)
Pout (2)
- d Bm
Isolation
- -
- 36
- 33 d Bm
Switching time tr, tf
- 1
µs
Stability
- No parasitic...