HMC757
Features
Saturated Output Power: +30 d Bm @ 30% PAE High Output IP3: +37 d Bm High Gain: 22 d B DC Supply: +7V @ 395 m A 50 Ohm Matched Input/Output Die Size: 2.4 x 0.9 x 0.1 mm
LINEAR & POWER AMPLIFIERS
- CHIP
- Point-to-Multi-Point Radios
- VSAT
- Military & Space
Functional Diagram
General Description
The HMC757 is a three stage Ga As p HEMT MMIC 1/2 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757 provides 22 d B of gain, and +30 d Bm of saturated output power at 30% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).
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Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 395 m A[1]
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 d B pression (P1d B) Saturated Output Power...
