The HMC757 is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates between 16 and 24 GHz.
The HMC757 provides 22 dB of gain, and +30 dBm of saturated output power at 30% PAE from a +7V supply.
Key Features
Saturated Output Power: +30 dBm @ 30% PAE High Output IP3: +37 dBm High Gain: 22 dB DC Supply: +7V @ 395 mA 50 Ohm Matched Input/Output Die Size: 2.4 x 0.9 x 0.1 mm
3
LINEAR & POWER.
Full PDF Text Transcription for HMC757 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HMC757. For precise diagrams, and layout, please refer to the original PDF.
HMC757 v00.0409 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz Typical Applications The HMC757 is ideal for: • Point-to-Point Radios Features Saturated Output Powe...
View more extracted text
7 is ideal for: • Point-to-Point Radios Features Saturated Output Power: +30 dBm @ 30% PAE High Output IP3: +37 dBm High Gain: 22 dB DC Supply: +7V @ 395 mA 50 Ohm Matched Input/Output Die Size: 2.4 x 0.9 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • VSAT • Military & Space Functional Diagram General Description The HMC757 is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757 provides 22 dB of gain, and +30 dBm of saturated output power at 30% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration in
HMC757 Datasheet
