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HXY3134CI - N-Channel Enhancement Mode MOSFET

Description

The HXY3134CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V ID =0.8A RDS(ON) < 250mΩ@ VGS=4.5V RDS(ON) < 360mΩ@ VGS=2.5V.

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Datasheet Details

Part number HXY3134CI
Manufacturer HuaXuanYang
File Size 399.10 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HXY3134CI Datasheet
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HUAXUANYANG HXY ELECTRONICS CO.,LTD Description The HXY3134CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =0.8A RDS(ON) < 250mΩ@ VGS=4.5V RDS(ON) < 360mΩ@ VGS=2.
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