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CS20N50ANH - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS20N50ANH
Manufacturer Huajing Discrete Devices
File Size 247.18 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS20N50ANH Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET ○R CS20N50 ANH General Description： VDSS 500 CS20N50 ANH, the silicon N-channel Enhanced ID 20 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 230 which reduce the conduction loss, improve switching RDS(ON)Typ 0.25 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P （N）, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor.