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Silicon N-Channel Power MOSFET
○R
CS20N50 ANH
General Description：
VDSS
500
CS20N50 ANH, the silicon N-channel Enhanced ID
20
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
230
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.25
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3P
（N）, which accords with the RoHS standard..
Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
CS20N50ANH Datasheet
