CS20N50ANH Datasheet | Huajing Discrete Devices

Silicon N-Channel Power MOSFET ○R CS20N50 ANH General Description： VDSS CS20N50 ANH, the silicon N-channel Enhanced ID VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 230 which reduce the conduction loss, improve switching RDS(ON)Typ 0.25 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P （N）, which accords with the RoHS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche...