3DD13003D - Silicon NPN bipolar transistor low-frequency amplification

Huajing Microelectronics

Datasheet Details

Part number	3DD13003D
Manufacturer	Huajing Microelectronics
File Size	167.08 KB
Description	Silicon NPN bipolar transistor low-frequency amplification
Datasheet	3DD13003D Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
3DD13003	High Voltage Fast Switching NPN Power Transistor	GME
3DD13003	TRANSISTOR	Jiangsu Changjiang Electronics
3DD13003	Plastic-Encapsulated Transistors	TRANSYS Electronics
3DD13003	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR	JILIN SINO-MICROELECTRONICS
3DD13003A	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR	JILIN SINO-MICROELECTRONICS

Other Datasheets by Huajing Microelectronics

Part Number	Description
3DD13003A1D	Silicon NPN bipolar transistor
3DD13003E1D	NPN Transistor
3DD13003E6D	Silicon NPN Transistor
3DD13003F1D	Silicon NPN Transistor
3DD13003F3D	Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NPN ○R 3DD13003D 1 ： 3DD13003D NPN ，，，， VCEO 、。：TO-126F ， RoHS 。 IC Ptot （TC=25℃） 400 2.5 50 V A W 2 ： TO-126F ● ● ● ● ● 1 2 3 1. B 2. C 3. E 3 ：、，。 C B VD E （）（Pb） ≤0.1% （Hg）（Cd）（Cr(VI)） (PBB) （PBDE） ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○○○ ○ ○ × ○○○ ○ ○ ○： SJ/T11363-2006 。 ×： SJ/T11363-2006 。（Pb）， RoHS 。 1 5 2008 4 ，Ta= 25℃ - - - Ta=25℃ Tc=25℃ VCBO VCEO VEBO IC Ptot Tj Tstg ○R 3DD13003D 700 400 9 2.5 1.