3DD13005C9D Overview
5A 基 极-发射极饱和电压 VBE sat IC=2A, IB=0.
| Part number | 3DD13005C9D |
|---|---|
| Datasheet | 3DD13005C9D-HuajingMicroelectronics.pdf |
| File Size | 151.98 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon NPN triple diffusion type bipolar transistor |
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5A 基 极-发射极饱和电压 VBE sat IC=2A, IB=0.
See all Huajing Microelectronics datasheets
| Part Number | Description |
|---|---|
| 3DD13005C3D | Silicon NPN Transistor |
| 3DD13005C7D | Silicon NPN Transistor |
| 3DD13005C8D | Silicon NPN Transistor |
| 3DD13005A1 | Silicon NPN bipolar transistor low-frequency amplification |
| 3DD13005A3 | Silicon NPN Transistor |
| 3DD13005A4-H | Silicon NPN bipolar transistor |
| 3DD13005A7 | Silicon NPN Transistor |
| 3DD13005B3 | Silicon NPN Transistor |
| 3DD13005B5 | Silicon NPN Transistor |
| 3DD13005B7 | Silicon NPN bipolar transistor |