BT15N120ANF - Silicon FS Planar IGBT

Description

Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness.

Features

l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.2V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability.

Huajing Microelectronics

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Datasheet Details

Part number	BT15N120ANF
Manufacturer	Huajing Microelectronics
File Size	253.49 KB
Description	Silicon FS Planar IGBT
Datasheet	BT15N120ANF Datasheet
Additional preview pages of the BT15N120ANF datasheet.

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Full PDF Text Transcription

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Silicon FS Planar IGBT BT15N120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot （TC=25℃） VCE(SAT) 1200 25 186 2.2 V A W V Features： l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.2V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability Applications： Power switch circuit of induction cooker(IH).

Published: Dec 6, 2016 |