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BT15N120ANF Datasheet Silicon Fs Planar IGBT

Manufacturer: Huajing Microelectronics

Overview: Silicon FS Planar IGBT BT15N120ANF ○R General.

General Description

: Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness.

VCES IC Ptot (TC=25℃) VCE(SAT) 1200 25 186 2.2 V A W V

Key Features

  • l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.2V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability.

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