CRTE210P04L2-G - Silicon P-Channel Power MOSFET

Product Overview

Huajing Microelectronics

Datasheet Details

Part number	CRTE210P04L2-G
Manufacturer	Huajing Microelectronics
File Size	1.10 MB
Description	Silicon P-Channel Power MOSFET
Datasheet	CRTE210P04L2-G Datasheet
Additional preview pages of the CRTE210P04L2-G datasheet.

Product details

Description

CRTE210P04L2-G, the silicon P-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

Fast Switching.
Low ON Resistance(Rdson≤21 mΩ).
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.
Halogen Free.

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Published: Oct 26, 2024 |