• Part: CS10N65FA9HD
  • Description: Silicon N-Channel Power MOSFET
  • Manufacturer: Huajing Microelectronics
  • Size: 350.67 KB
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Datasheet Summary

Silicon N-Channel Power MOSFET CS10N65F A9HD ○R General Description: CS10N65F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 650 10 50 0.65 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features : l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applicatio...