CS10N65ARR-G Overview
Description
： CS10N65 ARR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 10 A 130 W 0.86 Ω
- Low ON Resistance(Rdson≤1.0Ω)
- Low Gate Charge (Typical Data:32nC)
- Low Reverse transfer capacitances(Typical:7pF)
- 100% Single Pulse avalanche energy Test
