The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Silicon N-Channel Power MOSFET
○R
CS10N60 A0R
General Description：
VDSS
600
CS10N60 A0R, the silicon N-channel Enhanced ID
10
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
130
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.68
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-263,
which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤0.9Ω)
Low Gate Charge (Typical Data:32nC)
Low Reverse transfer capacitances(Typical:7.5pF)
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS10N60A0R Datasheet
