CS10N60A0R Overview
Description
： VDSS 600 CS10N60 A0R, the silicon N-channel Enhanced ID 10 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 130 which reduce the conduction loss, improve switching RDS(ON)Typ 0.68 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.9Ω)
- Low Gate Charge (Typical Data:32nC)
- Low Reverse transfer capacitances(Typical:7.5pF)
- 100% Single Pulse avalanche energy Test
