• Part: CS13N50FA9D
  • Description: Silicon N-Channel Power MOSFET
  • Manufacturer: Huajing Microelectronics
  • Size: 485.67 KB
Download CS13N50FA9D Datasheet PDF
CS13N50FA9D page 2
Page 2
CS13N50FA9D page 3
Page 3

Datasheet Summary

Silicon N-Channel Power MOSFET CS13N50F A9D ○R General Description: CS13N50F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features : l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and...