CS1N70A3H-G datasheet by Huajing Microelectronics.
| Part number | CS1N70A3H-G |
|---|---|
| Datasheet | CS1N70A3H-G-HuajingMicroelectronics.pdf |
| File Size | 445.26 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 13 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with...
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