CS1N70A3H-G Datasheet | Huajing Microelectronics

Description ： VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 13 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the Ro HS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:4.1n C) l Low Reverse transfer capacitances(Typical:2.2p F) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 TJ，Tstg TL Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain...