GENERAL DESCRIPTION
： CS25N06 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 60 25 50 28 performance and enhance the avalanche energy. FEATURES
： l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche energy Test APPLICATIONS
： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS dv/dt a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current
Huajing Microelectronics
