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CS25N06B4 - Silicon N-Channel Power MOSFET

General Description

CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 60 V 25 A 50 W 28 mΩ.

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Datasheet Details

Part number CS25N06B4
Manufacturer Huajing Microelectronics
File Size 697.00 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS25N06B4 Datasheet

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Silicon N-Channel Power MOSFET CS25N06 B4 ○R General Description： CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤36 mΩ) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:87pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 60 V 25 A 50 W 28 mΩ Applications： Automotive、DC Motor Control and Class D Amplifier.