| Part | CS25N06C4 |
|---|---|
| Description | Silicon N-Channel Power MOSFET |
| Category | MOSFET |
| Manufacturer | CR Micro |
| Size | 748.93 KB |
： CS25N06 C4 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications.
| Part Number | Manufacturer | Description |
|---|---|---|
| CS25N06B4 | Huajing Microelectronics | Silicon N-Channel Power MOSFET |
| CS25N06B3 | Huajing Microelectronics | Silicon N-Channel Power MOSFET |
| CS25N06B8 | Huajing Microelectronics | Silicon N-Channel Power MOSFET |
