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CS2N70A3R1-G - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS2N70A3R1-G
Manufacturer Huajing Microelectronics
File Size 188.63 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS2N70A3R1-G Datasheet

Full PDF Text Transcription for CS2N70A3R1-G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS2N70A3R1-G. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS2N70 A3R1-G ○R General Description： VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-ali...

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ilicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit o

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