CS3710B8 Description
： CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.
CS3710B8 Key Features
- Fast Switching
- Low ON Resistance(Rdson≤23 mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test