CS38N30AN Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS38N30 AN ○R General Description： CS38N30 AN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3PN, which accords with the RoHS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.085Ω) l Low Gate Charge (Typical Data:123nC) l Low Reverse transfer capacitances(Typical:82pF) l 100% Single Pulse avalanche energy Test 300 38.5 290...