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Silicon N-Channel Power MOSFET
CS38N30 AN
○R
General Description：
CS38N30 AN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3PN,
which accords with the RoHS standard..
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.085Ω) l Low Gate Charge (Typical Data:123nC) l Low Reverse transfer capacitances(Typical:82pF) l 100% Single Pulse avalanche energy Test
300 38.5 290 0.045
V A W Ω
Applications：
Power switch circuit of electric welder.
CS38N30AN Datasheet
