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Silicon N-Channel Power MOSFET CS3N20 ATH
○R
General Description：
CS3N20 ATH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOT-89,
which accords with the RoHS standard.
Features：
l Fast Switching
200 3 2.5 1.2
l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS3N20ATH Datasheet
