CS3R50A3 - Silicon N-Channel Power MOSFET

Huajing Microelectronics

General Description

performance and enhance the avalanche energy.

Key Features

l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test.

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CS3R50A3 silicon n-channel power mosfet by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	CS3R50A3
Manufacturer	Huajing Microelectronics
File Size	257.74 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS3R50A3 Datasheet

Full PDF Text Transcription for CS3R50A3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS3R50A3. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS3R50 A3 ○R General Description： VDSS 500 V CS3R50 A3, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned pla...

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-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.4 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electr

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