CS50N20ANH Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS50N20 ANH ○R General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P（N）, which accords with the RoHS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.045Ω) l Low Gate Charge (Typical Data:150nC) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless...