Datasheet Summary
Silicon N-Channel Power MOSFET
CS540 A3
○R
General Description：
CS540 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and
VDSS ID PD(TC=25℃) RDS(ON)Typ
100 33 150 30 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤44 mΩ) l Low Gate Charge (Typical Data:37nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test
Applications：
Au...