CS540A8 Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS540 A8 ○R General Description： CS540 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 100 33 150 30 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤44 mΩ) l Low Gate Charge (Typical Data:37nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications：...