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CS5N65A7H - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤1.9Ω) l Low Gate Charge (Typical Data:19nC) l Low Reverse transfer capacitances(Typical: 7pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS5N65A7H
Manufacturer Huajing Microelectronics
File Size 416.77 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS5N65A7H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET CS5N65 A7H ○R General Description： CS5N65 A7H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 5 32 1.6 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-126F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤1.9Ω) l Low Gate Charge (Typical Data:19nC) l Low Reverse transfer capacitances(Typical: 7pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.