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Silicon N-Channel Power MOSFET
CS5N65F A9H
○R
General Description:
CS5N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and
VDSS ID PD(TC=25℃) RDS(ON)Typ
650 5 32 1.6
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220F, which accords
with the RoHS standard.
Features:
l Fast Switching l Low ON Resistance(Rdson≤1.9Ω) l Low Gate Charge (Typical Data:19nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.