CS6N60A3D - Silicon N-Channel Power MOSFET

Product Overview

Huajing Microelectronics

Datasheet Details

Part number	CS6N60A3D
Manufacturer	Huajing Microelectronics
File Size	353.23 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS6N60A3D Datasheet
Additional preview pages of the CS6N60A3D datasheet.

Product details

Description

CS6N60 A3D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test.

📁 Similar Datasheet

CS6N60 - VDMOS (ETC)
CS6N60F - N-Channel MOSFET (LZG)
CS6N60F - VDMOS (ETC)
CS6N120A0R-G - Silicon N-Channel Power MOSFET (CR Micro)
CS6N120A8R-G - Silicon N-Channel Power MOSFET (CR Micro)
CS6N120AHR-G - Silicon N-Channel Power MOSFET (CR Micro)
CS6N120AKR-G - Silicon N-Channel Power MOSFET (CR Micro)
CS6N120FA9R-G - Silicon N-Channel Power MOSFET (CR Micro)

Other Datasheets by Huajing Microelectronics

CS6N60A3HDY - Silicon N-Channel Power MOSFET
CS6N60A3TY - Silicon N-Channel Power MOSFET
CS6N60A4D - Silicon N-Channel Power MOSFET
CS6N60A4H - Silicon N-Channel Power MOSFET
CS6N60A4TY - Silicon N-Channel Power MOSFET
CS6N60A7H - Silicon N-Channel Power MOSFET

Published: Dec 6, 2016 |