Datasheet4U Logo Datasheet4U.com

CS6N60A3D - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Datasheet Details

Part number CS6N60A3D
Manufacturer Huajing Microelectronics
File Size 353.23 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS6N60A3D Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CS6N60 VDMOS ETC
CS6N60F N-Channel MOSFET LZG
CS6N60F VDMOS ETC
CS6N120A0R-G Silicon N-Channel Power MOSFET CR Micro
CS6N120A8R-G Silicon N-Channel Power MOSFET CR Micro

Other Datasheets by Huajing Microelectronics

Part Number Description
CS6N60A3HDY Silicon N-Channel Power MOSFET
CS6N60A3TY Silicon N-Channel Power MOSFET
CS6N60A4D Silicon N-Channel Power MOSFET
CS6N60A4H Silicon N-Channel Power MOSFET
CS6N60A4TY Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET CS6N60 A3D ○R General Description： CS6N60 A3D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.