CS6N60A3HDY datasheet by Huajing Microelectronics.
| Part number | CS6N60A3HDY |
|---|---|
| Datasheet | CS6N60A3HDY-HuajingDiscreteDevices.pdf |
| File Size | 230.20 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： CS6N60 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251,which accords with the RoHS standard.
View all Huajing Microelectronics datasheets
| Part Number | Description |
|---|---|
| CS6N60A3D | Silicon N-Channel Power MOSFET |
| CS6N60A3TY | Silicon N-Channel Power MOSFET |
| CS6N60A4D | Silicon N-Channel Power MOSFET |
| CS6N60A4H | Silicon N-Channel Power MOSFET |
| CS6N60A4TY | Silicon N-Channel Power MOSFET |
| CS6N60A7H | Silicon N-Channel Power MOSFET |
| CS6N60A8H | Silicon N-Channel Power MOSFET |
| CS6N60FA9H | Silicon N-Channel Power MOSFET |
| CS6N60FA9H-G | Silicon N-Channel Power MOSFET |
| CS6N60FA9TY | Silicon N-Channel Power MOSFET |
