CS6N60A4D datasheet by Huajing Microelectronics.
| Part number | CS6N60A4D |
|---|---|
| Datasheet | CS6N60A4D-HuajingMicroelectronics.pdf |
| File Size | 351.27 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： CS6N60 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 6 95 1.0 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS...
View all Huajing Microelectronics datasheets
| Part Number | Description |
|---|---|
| CS6N60A4H | Silicon N-Channel Power MOSFET |
| CS6N60A4TY | Silicon N-Channel Power MOSFET |
| CS6N60A3D | Silicon N-Channel Power MOSFET |
| CS6N60A3HDY | Silicon N-Channel Power MOSFET |
| CS6N60A3TY | Silicon N-Channel Power MOSFET |
| CS6N60A7H | Silicon N-Channel Power MOSFET |
| CS6N60A8H | Silicon N-Channel Power MOSFET |
| CS6N60FA9H | Silicon N-Channel Power MOSFET |
| CS6N60FA9H-G | Silicon N-Channel Power MOSFET |
| CS6N60FA9TY | Silicon N-Channel Power MOSFET |
