CS6N70B3D1-G - Silicon N-Channel Power MOSFET

Huajing Microelectronics

General Description

performance and enhance the avalanche energy.

Key Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test.

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CS6N70B3D1-G silicon n-channel power mosfet by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	CS6N70B3D1-G
Manufacturer	Huajing Microelectronics
File Size	230.72 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS6N70B3D1-G Datasheet

Full PDF Text Transcription for CS6N70B3D1-G (Reference)

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Silicon N-Channel Power MOSFET CS6N70 B3D1-G ○R General Description： CS6N70 B3D1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Techn...

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annel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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