| Part number | CS6N70B3D1-G |
|---|---|
| Datasheet | CS6N70B3D1-G-HuajingMicroelectronics.pdf |
| File Size | 230.72 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： CS6N70 B3D1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.
See all Huajing Microelectronics datasheets
| Part Number | Description |
|---|---|
| CS6N70A3D-G | Silicon N-Channel Power MOSFET |
| CS6N70A3D1-G | Silicon N-Channel Power MOSFET |
| CS6N70A3H | Silicon N-Channel Power MOSFET |
| CS6N70A4D-G | Silicon N-Channel Power MOSFET |
| CS6N70A8D | Silicon N-Channel Power MOSFET |
| CS6N70CRHD | Silicon N-Channel Power MOSFET |
| CS6N70FA9D | Silicon N-Channel Power MOSFET |
| CS6N70FA9H | Silicon N-Channel Power MOSFET |
| CS6N70FB9D | Silicon N-Channel Power MOSFET |
| CS6N60A3D | Silicon N-Channel Power MOSFET |
