CS6N90ARH-G Datasheet PDF | Huajing Microelectronics

Huajing Microelectronics CS6N90ARH-G

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-262, which accords with the RoHS standard.

Part No.	CS6N90ARH-G
Datasheet	CS6N90ARH-G Download
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
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GENERAL DESCRIPTION

： CS6N90 ARH-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

FEATURES

： l Fast Switching l Low ON Resistance(Rdson≤2.3Ω ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:11pF) l 100% Single Pulse avalanche energy Test l Halogen Free

APPLICATIONS

： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering VDSS ID PD(TC=25℃) RDS(ON)Typ 900 6 110 1.85 Rating 900 6 4 24 ±30 120 5.0 110 0.88 15...