CS840A8D Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS840 A8D ○R General Description： CS840 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 500 7 100 0.68 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the Ro HS standard. Features ： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24n C) l Low Reverse transfer capacitances(Typical:10.4p F) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100...