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Silicon N-Channel Power MOSFET
CS840 A8H
○R
General Description：
CS840 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and
VDSS ID PD (TC=25℃) RDS(ON)Typ
500 8
110 0.57
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which accords
with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:18pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS840A8H Datasheet
