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Silicon N-Channel Power MOSFET
○R
CS9N90 ANHD
General Description：
CS9N90 ANHD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard.
Features：
Fast Switching
ESD Improved Capability
Low Gate Charge (Typical Data: 65nC)
Low Reverse transfer capacitances(Typical: 13pF)
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of PC POWER.
CS9N90ANHD Datasheet
